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Same model may have multiple batches, images only for reference.
FDP52N20 Real Image
Same model may have multiple batches, images only for reference.

FDP52N20

Part No FDP52N20
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 52A TO-220
Datasheet
FDP52N20 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 2900pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 357W (Tc)
Maximum Rds On at Id,Vgs 49 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 067023-FDP52N20
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name FDP52N20
Introduction Date January 01, 2006
ECCN EAR99
Country of Origin China, Republic of Korea
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian FDP52N20 CAD Model

Description

The Fairchild/ON Semiconductor FDP52N20 is an N-channel MOSFET.

  • Maximum Power Dissipation: 357W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 52A (Tc)
  • Maximum Rds On: 49 mOhm @ 26A, 10V
  • Estimated EOL Date: 2024

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5040 $52.6400
75+ $1.4088 $105.6600
115+ $1.3612 $156.5380
160+ $1.2661 $202.5760
210+ $1.2185 $255.8850
260+ $1.1709 $304.4340
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Availability: 10,000 pieces
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