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DMN3052L-7

Part No DMN3052L-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 5.4A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2V, 10V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Input Capacitance 555pF @ 5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.4W (Ta)
Maximum Rds On at Id,Vgs 32 mOhm @ 5.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 014436-DMN3052L-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN3052L-7 CAD Model

Description

DMN3052L-7 MOSFET by Diodes Incorporated

The DMN3052L-7 is a high-performance, N-channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This electronic component is part of Diodes Incorporated's extensive MOSFET product line and is well-suited for a range of applications that demand efficient power management and high-speed switching.

Key Features

  • Low On-Resistance: The DMN3052L-7 features a low on-resistance (RDS(on)), which improves its efficiency by minimizing power loss during operation.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for applications that require quick transitions between on and off states.
  • Low Threshold Voltage: The device has a low gate threshold voltage (VGS(th)), making it easier to drive and suitable for low-voltage applications.
  • Advanced Packaging: Encased in a small footprint SOT-23 package, the DMN3052L-7 is perfect for space-constrained applications while providing excellent thermal performance.
  • RoHS Compliant: This product complies with the RoHS directive, ensuring it meets global environmental and safety standards by avoiding hazardous substances.

Applications

The DMN3052L-7 is versatile and can be used in various applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Control Circuits

Technical Specifications

Some of the notable technical specifications of the DMN3052L-7 include:

  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 6.7A
  • Power Dissipation (PD): 1.25W
  • Operating Temperature Range: -55°C to +150°C

Diodes Incorporated's commitment to quality ensures that the DMN3052L-7 MOSFET delivers reliable and consistent performance for a wide array of electronic designs. It is a practical choice for designers looking to optimize their power management solutions with a compact, efficient, and robust component.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 135,825 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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