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Same model may have multiple batches, images only for reference.
FDP5N60NZ Real Image
Same model may have multiple batches, images only for reference.

FDP5N60NZ

Part No FDP5N60NZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4.5A TO-220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 600pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 2.25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 067026-FDP5N60NZ
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDP5N60NZ CAD Model

Description

The FDP5N60NZ MOSFET is a N-channel, through-hole device commonly used in power management applications.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 4.5A (Tc)
  • Maximum Gate Charge: 13nC @ 10V
  • Maximum Rds On at Id,Vgs: 2 Ohm @ 2.25A, 10V
  • Package: TO-220-3
  • Dimension: TO-220-3
  • Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4810 $50.5050
255+ $0.3946 $100.6230
395+ $0.3823 $151.0085
545+ $0.3700 $201.6500
700+ $0.3576 $250.3200
940+ $0.3207 $301.4580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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