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Same model may have multiple batches, images only for reference.
FDPF5N50TYDTU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDPF5N50TYDTU

Part No FDPF5N50TYDTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V TO-220FP-3
Datasheet
FDPF5N50TYDTU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 640pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 28W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F (LG-Formed)
Dimension TO-220-3 Full Pack, Formed Leads
Win Source Part Number 1038361-FDPF5N50TYDTU
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDPF5N50TYDTU CAD Model

Description

The Fairchild/ON Semiconductor FDPF5N50TYDTU is an N-channel MOSFET transistor with a maximum power dissipation of 28W (Tc).

  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 1.4 Ohm @ 2.5A, 10V
  • Package: TO-220F (LG-Formed)
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Lifecycle Status: Obsolete (EOL)
  • Reliable Option for: various applications

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