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Same model may have multiple batches, images only for reference.
FDS3601 Real Image
Same model may have multiple batches, images only for reference.

FDS3601

Part No FDS3601
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 100V 1.3A 8SOIC
Datasheet
FDS3601 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1.3A
Maximum Rds On at Id,Vgs 480 mOhm @ 1.3A, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 5nC @ 10V
Max Input Capacitance 153pF @ 50V
Maximum Power Dissipation 900mW
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 067072-FDS3601
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian FDS3601 CAD Model

Description

The 2 N-Channel (Dual) FET from Fairchild/ON Semiconductor is designed for power management and industrial applications.

  • Power Dissipation (Max): 900mW
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 1.3A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge (Max): 5nC @ 10V
  • Input Capacitance (Max): 153pF @ 50V
  • Mounting: SMD (SMT)
  • Category: Discrete Semiconductor Products
  • Packaging: Reel - TR
  • Popularity: Medium
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
240+ $0.2118 $50.8320
580+ $0.1738 $100.8040
895+ $0.1684 $150.7180
1,230+ $0.1630 $200.4900
1,590+ $0.1575 $250.4250
2,125+ $0.1412 $300.0500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 240 pcs
Order Increment : 1 pcs
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