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Same model may have multiple batches, images only for reference.
FDS3670 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDS3670

Part No FDS3670
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 6.3A 8-SOIC
Datasheet
FDS3670 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 2490pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 32 mOhm @ 6.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 067073-FDS3670
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDS3670 CAD Model

Description

The FDS3670 is a MOSFET from Fairchild/ON Semiconductor used for switching high current loads with a low voltage control signal.

  • Power Dissipation (Max): 2.5W
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 6.3A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate-Source Voltage (Max): ±20V
  • Rds On (Max): 32 mOhm @ 6.3A, 10V
  • Popularity: Low
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2569 $58.6794
63+ $1.8515 $116.6445
97+ $1.7937 $173.9889
134+ $1.7360 $232.6240
173+ $1.6782 $290.3286
231+ $1.5050 $347.6550
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Availability: 1,270 pieces
MOQ: 26 pcs
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