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FDS4935_NL

Part No FDS4935_NL
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 008, Plastic Molded, SOIC-8 Pkg, Narrow Body, Dual Die <az
Sample
Rohs State rohs
ECAD Module
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RoHS Compliant
Win Source Part Number 1058890-FDS4935_NL
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FDS4935_NL CAD Model

Description

The FDS4935_NL is a P-Channel PowerTrench® MOSFET from Fairchild Semiconductor (now ON Semiconductor). It's designed for battery management and load switching applications in portable devices. This MOSFET provides efficient power management in a small footprint.

Applications:

  • Battery management
  • Load switching
  • Power management in portable devices (smartphones, tablets, laptops)
  • DC-DC conversion

Features:

  • -30V Drain-Source Voltage (VDS)
  • -5.6A Continuous Drain Current (ID)
  • Low RDS(on)
  • Low gate charge (Qg)
  • SO-8 package
  • RoHS Compliant

Benefits:

  • High efficiency: Low RDS(on) minimizes power loss and increases efficiency.
  • Compact design: SO-8 package saves board space in portable devices.
  • Extended battery life: Low gate charge reduces switching losses, extending battery life.
  • Improved thermal performance: Optimized thermal characteristics for reliable operation.
  • Reliable operation: Robust design ensures performance in demanding applications.

Technical Specifications:

The FDS4935_NL has a drain-source voltage (VDS) of -30V and a continuous drain current (ID) of -5.6A. The typical drain-source on-resistance (RDS(on)) at VGS = -10V is 0.05 Ohms, and 0.07 Ohms at VGS = -4.5V. The gate-source voltage (VGS) is rated at ±20V. The total gate charge (Qg) is typically 17 nC. It is available in an SO-8 package.

This P-Channel MOSFET is an excellent choice for battery management and load switching applications in portable devices. Its low on-resistance and gate charge minimize power losses and contribute to efficient operation and longer battery life in space-constrained applications.

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