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FDS4935BZ Real Image FDS4935BZ real image4131 FDS4935BZ real image4132 FDS4935BZ real image4133 FDS4935BZ Real Image1 FDS4935BZ Real Image2 FDS4935BZ Real Image3 FDS4935BZ Real Image4 FDS4935BZ Real Image5 FDS4935BZ Real Image6 FDS4935BZ Real Image7
Same model may have multiple batches, images only for reference.
FDS4935BZ Real Image FDS4935BZ real image4131 FDS4935BZ real image4132 FDS4935BZ real image4133 FDS4935BZ Real Image1 FDS4935BZ Real Image2 FDS4935BZ Real Image3 FDS4935BZ Real Image4 FDS4935BZ Real Image5 FDS4935BZ Real Image6 FDS4935BZ Real Image7
FDS4935BZ Real Image FDS4935BZ real image4131 FDS4935BZ real image4132 FDS4935BZ real image4133 FDS4935BZ Real Image1 FDS4935BZ Real Image2 FDS4935BZ Real Image3 FDS4935BZ Real Image4 FDS4935BZ Real Image5 FDS4935BZ Real Image6 FDS4935BZ Real Image7
Same model may have multiple batches, images only for reference.

FDS4935BZ

Part No FDS4935BZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 6.9A 8-SOIC
Datasheet
FDS4935BZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.9A
Maximum Rds On at Id,Vgs 22 mOhm @ 6.9A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1360pF @ 15V
Maximum Power Dissipation 900mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 016145-FDS4935BZ
Family Name FDS4935BZ
Introduction Date April 11, 2006
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS4935BZ CAD Model

Description

The FDS4935BZ is a 2 P-Channel (Dual) Logic Level Gate FET designed for use in Discrete Semiconductor Products. Manufactured by Fairchild/ON Semiconductor

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 6.9A
  • Gate-Source Threshold Voltage: 3V at 250μA
  • Max Gate Charge: 40nC at 10V
  • Max Input Capacitance: 1360pF at 15V
  • FET Type: SMD (SMT)
  • Packaging: Reel - TR
  • Maximum Power Dissipation: 900mW
  • Maximum Rds On: 22 mOhm at 6.9A, 10V
  • Halogen Free: Compliant
  • Country of Origin: China, Philippines
  • Supply and Demand Status: Limited
  • Pieces per package: 2,500

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6442 $51.5360
190+ $0.5286 $100.4340
295+ $0.5121 $151.0695
405+ $0.4955 $200.6775
525+ $0.4790 $251.4750
700+ $0.4295 $300.6500
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Availability: 47,508 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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