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Same model may have multiple batches, images only for reference.
FDS6694 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDS6694

Part No FDS6694
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A 8-SOIC
Datasheet
FDS6694 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 19nC @ 5V
Max Input Capacitance 1293pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 11 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 067095-FDS6694
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian FDS6694 CAD Model

Description

The Fairchild/ON Semiconductor FDS6694 is a N-channel MOSFET.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 12A at 25°C
  • Package: 8-SO
  • Operating Temperature: -55°C to 175°C
  • Gate-Source Threshold Voltage: 3V at 250μA
  • Maximum Gate Charge: 19nC at 5V
  • Maximum Rds On: 11 mOhm at 12A, 10V
  • Applications: Power management and industrial applications

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Quantity Unit Price Ext. Price
175+ $0.2889 $50.5575
425+ $0.2371 $100.7675
655+ $0.2297 $150.4535
900+ $0.2223 $200.0700
1,165+ $0.2149 $250.3585
1,560+ $0.1926 $300.4560
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