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Same model may have multiple batches, images only for reference.
FDS86540 Real Image
Same model may have multiple batches, images only for reference.

FDS86540

Part No FDS86540
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 60V 18A 8-SO
Datasheet
FDS86540 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 6410pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1038429-FDS86540
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS86540 CAD Model

Description

The FDS86540 MOSFET is a high-performance N-channel transistor designed by Fairchild/ON Semiconductor.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 18A @ 25°C
  • Mounting Type: SMD (SMT)
  • Power Dissipation: 2.5W (Ta), 5W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 90nC @ 10V
  • Maximum Input Capacitance: 6410pF @ 30V
  • Package: 8-SO
  • Dimension: 8-SOIC (0.154", 3.90mm Width)

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Pricing & Ordering

Quantity Unit Price Ext. Price
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55+ $2.1120 $116.1600
85+ $2.0460 $173.9100
117+ $1.9801 $231.6717
151+ $1.9140 $289.0140
202+ $1.7160 $346.6320
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Availability: 215 pieces
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