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FDS8962C

Part No FDS8962C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 7A/5A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7A, 5A
Maximum Rds On at Id,Vgs 30 mOhm @ 7A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 575pF @ 15V
Maximum Power Dissipation 900mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 126818-FDS8962C
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDS8962C CAD Model

Description

The Fairchild/ON Semiconductor FDS8962C is a N and P-Channel FET with Logic Level Gate feature. It is designed for Discrete Semiconductor Products and has a maximum power dissipation of 900mW.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 7A, 5A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 26nC @ 10V
  • Maximum Rds On (Id,Vgs): 30 mOhm @ 7A, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-SO
  • Status: Obsolete(EOL)
  • Popularity: Medium
  • Supply and Demand: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5891 $58.9100
240+ $0.4828 $115.8720
375+ $0.4678 $175.4250
515+ $0.4528 $233.1920
660+ $0.4377 $288.8820
885+ $0.3927 $347.5395
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,340 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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