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Same model may have multiple batches, images only for reference.
IRF7402PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7402PBF

Part No IRF7402PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 6.8A 8-SOIC
Datasheet
IRF7402PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 22nC @ 4.5V
Max Input Capacitance 650pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 35 mOhm @ 4.1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046628-IRF7402PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7402PBF CAD Model

Description

The IRF7402PBF is a N-channel MOSFET transistor from Infineon Technologies.

  • Package: 8-SO
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 6.8A @ 25°C
  • Rds On: 35 mOhm @ 4.1A and 4.5V
  • Gate Charge: 22nC @ 4.5V
  • Input Capacitance: 650pF @ 15V
  • Temperature Range: -55°C to 150°C
  • Power Dissipation: 2.5W (Ta)
  • Maximum Gate-Source Voltage: ±12V
  • Applications: Power Supplies, Motor Control, and Lighting

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19+ $3.1878 $60.5682
45+ $2.6149 $117.6705
69+ $2.5341 $174.8529
95+ $2.4521 $232.9495
122+ $2.3701 $289.1522
164+ $2.1252 $348.5328
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