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Same model may have multiple batches, images only for reference.
FDU3580 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDU3580

Part No FDU3580
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 7.7A I-PAK
Datasheet
FDU3580 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 7.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 79nC @ 10V
Max Input Capacitance 1760pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 29 mOhm @ 7.7A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1038470-FDU3580
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDU3580 CAD Model

Description

The Fairchild/ON Semiconductor FDU3580 is a MOSFET transistor with an N-Channel polarity.

  • Power Dissipation: 3.8W (Ta) and 42W (Tc)
  • Drive Voltage: 6V and 10V
  • Product Type: Discrete Semiconductor Product
  • Mounting Type: Through Hole
  • Packaging: Tube/Rail
  • Case/Package: IPAK (TO-251)
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current @ 25°C: 7.7A (Ta)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 79nC @ 10V
  • Maximum Input Capacitance: 1760pF @ 40V
  • Maximum Rds On @ Id,Vgs: 29 mOhm @ 7.7A, 10V
  • Lifecycle Status: Obsolete(EOL)
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: sufficient

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