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FDW2506P

Part No FDW2506P
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 5.3A 8-TSSO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.3A
Maximum Rds On at Id,Vgs 22 mOhm @ 5.3A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 34nC @ 4.5V
Max Input Capacitance 1015pF @ 10V
Maximum Power Dissipation 600mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 067120-FDW2506P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDW2506P CAD Model

Description

The Fairchild/ON Semiconductor FDW2506P is a dual P-channel MOSFET transistor designed for power management applications. It features a logic level gate and has a drain-source breakdown voltage of 20V.

  • Continuous Drain Current: 5.3A @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Gate Charge (Max): 34nC @ 4.5V
  • Rds On (Max): 22 mOhm @ 5.3A, 4.5V
  • Package: 8-TSSOP
  • Mounting: SMD (SMT)
  • Power Dissipation (Max): 600mW
  • Temperature Range: -55°C to 150°C (TJ)
  • Status: Obsolete (EOL)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,800 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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