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FDY4000CZ

Part No FDY4000CZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V SC89-6
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 600mA, 350mA
Maximum Rds On at Id,Vgs 700 mOhm @ 600mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 1.1nC @ 4.5V
Max Input Capacitance 60pF @ 10V
Maximum Power Dissipation 446mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Win Source Part Number 001154-FDY4000CZ
Popularity Medium
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDY4000CZ CAD Model

Description

The FDY4000CZ is a N and P-Channel FET featuring a Logic Level Gate and a Drain-Source Breakdown Voltage of 20V. This semiconductor product is categorized as a Discrete Semiconductor Product and is available in a SC-89-6 case. It can operate within a temperature range of -55°C to 150°C (TJ). With a Maximum Power Dissipation of 446mW and a Continuous Drain Current of 600mA at 25°C, this FET is suitable for various electronic applications. The Max Gate Charge of 1.1nC @ 4.5V and the Max Input Capacitance of 60pF @ 10V make this FET a reliable choice for high-performance circuits. This product is available in a reel of 3k pcs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3583 $51.8826
46+ $2.2090 $101.6140
71+ $2.1344 $151.5424
101+ $1.9851 $200.4951
131+ $1.9105 $250.2755
164+ $1.8359 $301.0876
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,800 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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