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FGH40N60UFDTU Fairchild/ON Semiconductor FGH40N60UFDTU Real Image1 FGH40N60UFDTU Real Image2 FGH40N60UFDTU Real Image3 FGH40N60UFDTU Real Image4 FGH40N60UFDTU Real Image5
Same model may have multiple batches, images only for reference.
FGH40N60UFDTU Fairchild/ON Semiconductor FGH40N60UFDTU Real Image1 FGH40N60UFDTU Real Image2 FGH40N60UFDTU Real Image3 FGH40N60UFDTU Real Image4 FGH40N60UFDTU Real Image5
FGH40N60UFDTU Fairchild/ON Semiconductor FGH40N60UFDTU Real Image1 FGH40N60UFDTU Real Image2 FGH40N60UFDTU Real Image3 FGH40N60UFDTU Real Image4 FGH40N60UFDTU Real Image5
Same model may have multiple batches, images only for reference.

FGH40N60UFDTU

Part No FGH40N60UFDTU
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247
Datasheet
FGH40N60UFDTU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
IGBT Type Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 80A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 40A
Maximum Power Dissipation 290W
Total Switching Energy(Ets) 1.19mJ (on), 460μJ (off)
Input Type Standard
Gate Charge 120nC
Turn-on and Turn-off delay time 24ns/112ns
Testing Conditions 400V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr) 45ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 1038670-FGH40N60UFDTU
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Industrial
Quantity per package 450
Family Name FGH40N60UFD
Introduction Date April 01, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian FGH40N60UFDTU CAD Model

Description

The Fairchild/ON Semiconductor FGH40N60UFDTU is a field stop IGBT transistor with a maximum collector-emitter breakdown voltage of 600V and a maximum collector current of 80A.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 80A
  • Collector-Emitter Saturation Voltage: 2.4V @ 15V, 40A
  • Maximum Gate Charge: 120nC
  • Package: TO-247
  • Suitable for: Industrial Applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3590 $51.8980
52+ $1.9356 $100.6512
80+ $1.8751 $150.0080
111+ $1.8146 $201.4206
143+ $1.7541 $250.8363
191+ $1.5727 $300.3857
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Availability: 7,200 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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