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Same model may have multiple batches, images only for reference.
FJV3110RMTF Real Image
Same model may have multiple batches, images only for reference.

FJV3110RMTF

Part No FJV3110RMTF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SOT23-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 100 @ 1mA, 5V
Max Vce (sat) 300mV @ 1mA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 016280-FJV3110RMTF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Automotive, Power Management
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FJV3110RMTF CAD Model

Description

The FJV3110RMTF is a pre-biased NPN transistor manufactured by Fairchild/ON Semiconductor.

  • Frequency Transition: 250MHz
  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 40V
  • Maximum Vce (sat): 300mV @ 1mA, 10mA
  • Collector Cut-off Current (Max): 100nA (ICBO)
  • Typical Gain (hFE) (Min): 100 @ 1mA, 5V
  • Maximum Power Dissipation: 200mW
  • Mounting: Surface-mount technology (SMT)
  • Package: SOT-23-3 (TO-236)
  • Category: Discrete Semiconductor
  • Applications: Industrial, automotive, and power management
  • Status: Active

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