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IPD600N25N3GBTMA1

Part No IPD600N25N3GBTMA1
Manufacturer Infineon Technologies
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CH 250V 25A TO252-3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Package Tape & Reel (TR);Cut Tape (CT)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 100 V
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Ultra Librarian 3D Model Ultra Librarian IPD600N25N3GBTMA1 CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.5188 $52.7820
35+ $2.8873 $101.0555
54+ $2.7970 $151.0380
74+ $2.7068 $200.3032
96+ $2.6166 $251.1936
128+ $2.3459 $300.2752
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