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FQA19N20L

Part No FQA19N20L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 25A TO-3P
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 35nC @ 5V
Max Input Capacitance 2200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 140 mOhm @ 12.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 204261-FQA19N20L
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQA19N20L CAD Model

Description

The Fairchild/ON Semiconductor 204261-FQA19N20L is a MOSFET technology product.

  • Package: Tube/Rail
  • Mounting: Through Hole
  • Polarity: N-Channel
  • Power Dissipation (Max): 190W (Tc)
  • Drive Voltage: 5V, 10V (Max Rds on, Min Rds on)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Case/Package: TO-3P (TO-3P-3, SC-65-3)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 25A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 35nC @ 5V
  • Maximum Input Capacitance: 2200pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds on: 140 mOhm @ 12.5A, 10V
  • Status: Obsolete (EOL)
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.6670 $58.3350
13+ $9.5730 $124.4490
19+ $9.2739 $176.2041
26+ $8.9747 $233.3422
34+ $8.6756 $294.9704
45+ $7.7782 $350.0190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,300 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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