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Same model may have multiple batches, images only for reference.
FQA55N10 Real Image
Same model may have multiple batches, images only for reference.

FQA55N10

Part No FQA55N10
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 61A TO-3P
Datasheet
FQA55N10 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 98nC @ 10V
Max Input Capacitance 2730pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 30.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 040326-FQA55N10
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQA55N10 CAD Model

Description

The Fairchild/ON Semiconductor 040326-FQA55N10 is a N-channel MOSFET electronic component.

  • Polarity: N-Channel
  • Power Dissipation: 190W (Tc)
  • Drive Voltage: 10V
  • Packaging: Tube/Rail
  • Mounting: Through Hole
  • Technology: MOSFET
  • Status: Obsolete(EOL)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Case/Package: TO-3P
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.5193 $59.8281
40+ $2.8875 $115.5000
62+ $2.7974 $173.4388
86+ $2.7073 $232.8278
111+ $2.6172 $290.5092
148+ $2.3458 $347.1784
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Availability: 27,000 pieces
MOQ: 17 pcs
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