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Same model may have multiple batches, images only for reference.
FQA7N80C_F109 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQA7N80C_F109

Part No FQA7N80C_F109
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 7A TO-3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1680pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 198W (Tc)
Maximum Rds On at Id,Vgs 1.9 Ohm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 104803-FQA7N80C_F109
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQA7N80C_F109 CAD Model

Description

The Fairchild/ON Semiconductor FQA7N80C_F109 is an N-channel MOSFET.

  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 7A (Tc) @ 25°C
  • Power Dissipation (Max): 198W (Tc)
  • Package: TO-3PN
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Gate Charge (Max): 35nC @ 10V
  • Rds On (Max): 1.9 Ohm @ 3.5A, 10V
  • Operating Temperature: -55°C to 150°C (TJ)

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Quantity Unit Price Ext. Price
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36+ $3.2675 $117.6300
55+ $3.1647 $174.0585
76+ $3.0631 $232.7956
98+ $2.9614 $290.2172
131+ $2.6542 $347.7002
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Availability: 12,000 pieces
MOQ: 15 pcs
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