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Same model may have multiple batches, images only for reference.
FQA8N80 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQA8N80

Part No FQA8N80
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series QFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 4.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 25 V
Power Dissipation (Max) 220W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
Standard Package 189 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 592484-FQA8N80
Ultra Librarian 3D Model Ultra Librarian FQA8N80 CAD Model

Description

The FQA8N80 is an N-Channel MOSFET transistor from the QFET® series. It is designed for high voltage power management applications, such as power supplies and motor control.

  • Drain to Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 8.4A @ 25°C
  • On-Resistance (Rds On): 1.2Ohm @ 4.2A and 10V
  • Package: TO-3P-3
  • Mounting: Through-hole
  • Temperature Range: -55°C to 150°C
  • Status: Active
  • Manufacturer: Fairchild/ON Semiconductor

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2603 $58.7678
63+ $1.8549 $116.8587
97+ $1.7972 $174.3284
133+ $1.7383 $231.1939
172+ $1.6805 $289.0460
230+ $1.5073 $346.6790
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Availability: 6,000 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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