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Same model may have multiple batches, images only for reference.
FQB10N20LTM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQB10N20LTM

Part No FQB10N20LTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 10A D2PAK
Datasheet
FQB10N20LTM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 17nC @ 5V
Max Input Capacitance 830pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.13W (Ta), 87W (Tc)
Maximum Rds On at Id,Vgs 360 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 067377-FQB10N20LTM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQB10N20LTM CAD Model

Description

The FQB10N20LTM is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation: 3.13W (Ta), 87W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 10A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 17nC @ 5V
  • Package: D2PAK (TO-263AB)
  • Mounting: Reel
  • Status: Obsolete (EOL)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0625 $58.4375
135+ $0.8718 $117.6930
210+ $0.8447 $177.3870
285+ $0.8174 $232.9590
370+ $0.7902 $292.3740
490+ $0.7084 $347.1160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,700 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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