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Same model may have multiple batches, images only for reference.
FQB13N10LTM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQB13N10LTM

Part No FQB13N10LTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 12.8A D2PAK
Datasheet
FQB13N10LTM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 12.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 12nC @ 5V
Max Input Capacitance 520pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.75W (Ta), 65W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 6.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1039607-FQB13N10LTM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQB13N10LTM CAD Model

Description

The Fairchild/ON Semiconductor FQB13N10LTM is an N-channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 12.8A @ 25°C
  • Maximum Rds On: 180 mOhm @ 6.4A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 520pF @ 25V
  • Package: D2PAK (TO-263AB)
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Balanced

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