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Same model may have multiple batches, images only for reference.
FQB19N20CTM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQB19N20CTM

Part No FQB19N20CTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 19A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 53nC @ 10V
Max Input Capacitance 1080pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 139W (Tc)
Maximum Rds On at Id,Vgs 170 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 016416-FQB19N20CTM
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FQB19N20CTM CAD Model

Description

The Fairchild/ON Semiconductor 016416-FQB19N20CTM is a N-channel MOSFET designed for use in discrete semiconductor products. With a drain-source breakdown voltage of 200V and a continuous drain current of 19A at 25°C, this MOSFET is suitable for use in a variety of applications.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current (25°C): 19A
  • Max Rds On at Id,Vgs: 170 mOhm @ 9.5A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 53nC @ 10V
  • Maximum Input Capacitance: 1080pF @ 25V
  • Case/Package: D2PAK (TO-263AB)

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