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Same model may have multiple batches, images only for reference.
FQB19N20LTM Real Image
Same model may have multiple batches, images only for reference.

FQB19N20LTM

Part No FQB19N20LTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 21A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 35nC @ 5V
Max Input Capacitance 2200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.13W (Ta), 140W (Tc)
Maximum Rds On at Id,Vgs 140 mOhm @ 10.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 016417-FQB19N20LTM
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FQB19N20LTM CAD Model

Description

The Fairchild/ON Semiconductor MOSFET, part number 016417-FQB19N20LTM, is an N-channel polarity MOSFET that is ideal for use in a variety of electronic devices.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 200V
  • Mounting Technology: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5860 $63.4400
90+ $1.3015 $117.1350
140+ $1.2608 $176.5120
190+ $1.2201 $231.8190
245+ $1.1794 $288.9530
330+ $1.0574 $348.9420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,500 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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