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Same model may have multiple batches, images only for reference.
FQB19N20TM Real Image
Same model may have multiple batches, images only for reference.

FQB19N20TM

Part No FQB19N20TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 19.4A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 19.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 140W (Tc)
Maximum Rds On at Id,Vgs 150 mOhm @ 9.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 016418-FQB19N20TM
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FQB19N20TM CAD Model

Description

The Fairchild/ON Semiconductor 016418-FQB19N20TM is a MOSFET with an N-channel polarity.

  • Maximum Power Dissipation: 3.13W (Ta), 140W (Tc)
  • Continuous Drain Current: 19.4A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 150 mOhm @ 9.7A, 10V
  • Category: Discrete Semiconductor Products
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7758 $53.2740
70+ $1.4571 $101.9970
110+ $1.4116 $155.2760
150+ $1.3660 $204.9000
190+ $1.3205 $250.8950
255+ $1.1839 $301.8945
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,200 pieces
MOQ: 30 pcs
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