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Same model may have multiple batches, images only for reference.
FQB30N06LTM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQB30N06LTM

Part No FQB30N06LTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 32A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 1040pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.75W (Ta), 79W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 136498-FQB30N06LTM
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FQB30N06LTM CAD Model

Description

The FQB30N06LTM is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 3.75W (Ta), 79W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 32A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 20nC @ 5V
  • Package: D2PAK (TO-263AB)
  • Mounting: Reel
  • Popularity: Medium
  • Applications: Power Management, Lighting, Audio, Motor Drive and Control

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6979 $52.3425
175+ $0.5727 $100.2225
275+ $0.5548 $152.5700
375+ $0.5369 $201.3375
485+ $0.5190 $251.7150
645+ $0.4653 $300.1185
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,600 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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