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Same model may have multiple batches, images only for reference.
FQB4N90TM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQB4N90TM

Part No FQB4N90TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 4.2A D2PAK
Datasheet
FQB4N90TM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 1100pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 140W (Tc)
Maximum Rds On at Id,Vgs 3.3 Ohm @ 2.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 204280-FQB4N90TM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQB4N90TM CAD Model

Description

The FQB4N90TM is an obsolete N-channel MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation: 140W
  • Continuous Drain Current: 4.2A
  • Drain-Source Breakdown Voltage: 900V
  • Maximum Rds On: 3.3 Ohm @ 2.1A, 10V

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