The FQB5N90 is an N-Channel MOSFET manufactured by Fairchild/ON Semiconductor, designed for high voltage power switching applications. It is commonly used in applications where high voltage blocking capability and efficient switching are required.

Applications:

• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• DC-DC converters
• Electronic ballasts for lighting
• Motor Control

Features:

• N-Channel MOSFET
• High Voltage (VDS): 900V
• Low Gate Charge (Qg)
• Avalanche Rated
• High Ruggedness
• Fast Body Diode Recovery

Benefits:

• Suitable for high voltage applications
• Reduced switching losses
• Improved system efficiency
• Robust performance under transient conditions
• Reliable operation in harsh environments
• Lower diode reverse recovery losses and noise

Specifications:

• Polarity: N-Channel
• Drain-Source Voltage (VDS): 900V
• Gate-Source Voltage (VGS): +/-30V
• Continuous Drain Current (ID): 3.3A
• Pulsed Drain Current (IDM): 9.9A
• On-Resistance (RDS(on)): 2.8 Ohms (typical) at VGS=10V
• Gate Charge (Qg): 11 nC (typical)
• Total Power Dissipation (PD): 30W
• Operating Temperature: -55°C to +150°C
• Package: TO-263 (D2PAK)

The high drain-source voltage rating makes the FQB5N90 suitable for applications that require high voltage blocking capability. The low gate charge contributes to reduced switching losses, leading to improved efficiency. The avalanche rating ensures that the MOSFET can withstand transient voltage spikes without damage. The fast body diode recovery characteristic helps to reduce reverse recovery losses and noise in switching circuits. The TO-263 (D2PAK) package provides good thermal performance, allowing for efficient heat dissipation. It is often used in applications where a high voltage, rugged MOSFET is required for efficient power conversion.