The Fairchild/ON Semiconductor 1175266-FQB6N50TM is an N-channel MOSFET designed for power management and industrial applications.

• Drain-Source Voltage: 500V
• Continuous Drain Current: 5.5A @ 25°C (Tc)
• Maximum Rds On @ Id,Vgs: 1.3 Ohm @ 2.8A and 10V
• Gate-Source Threshold Voltage: 5V @ 250μA
• Maximum Gate Charge: 22nC @ 10V
• Maximum Input Capacitance: 790pF @ 25V
• Maximum Gate-Source Voltage: ±30V
• Power Dissipation (max): 3.13W (Ta) and 130W (Tc)
• Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Operating Temperature: -55°C to 150°C (TJ)