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Same model may have multiple batches, images only for reference.
FQB9N08LTM Real Image
Same model may have multiple batches, images only for reference.

FQB9N08LTM

Part No FQB9N08LTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 9.3A D2PAK
Datasheet
FQB9N08LTM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 6.1nC @ 5V
Max Input Capacitance 280pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.75W (Ta), 40W (Tc)
Maximum Rds On at Id,Vgs 210 mOhm @ 4.65A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1039676-FQB9N08LTM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQB9N08LTM CAD Model

Description

The Fairchild/ON Semiconductor MOSFET transistor is a surface mount device with an N-channel polarity.

  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 9.3A (Tc) @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 210 mOhm @ 4.65A, 10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 6.1nC @ 5V
  • Maximum Input Capacitance: 280pF @ 25V
  • Power Dissipation (max): 3.75W (Ta), 40W (Tc)
  • Packaging: Reel packaging
  • Lifecycle Status: currently obsolete (EOL) in the market

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