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Same model may have multiple batches, images only for reference.
FQB9N25CTM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQB9N25CTM

Part No FQB9N25CTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 8.8A D2PAK
Datasheet
FQB9N25CTM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 710pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 74W (Tc)
Maximum Rds On at Id,Vgs 430 mOhm @ 4.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 204287-FQB9N25CTM
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQB9N25CTM CAD Model

Description

The Fairchild/ON Semiconductor 204287-FQB9N25CTM is a MOSFET electronic component.

  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Manufacturer: Fairchild/ON Semiconductor
  • Win Source Part Number: 204287-FQB9N25CTM
  • Package: D2PAK (TO-263AB)
  • Mounting: SMD (SMT)
  • Power Dissipation: 3.13W (Ta), 74W (Tc)
  • Rds On (Max): 430 mOhm @ 4.4A, 10V
  • Channel Type: N-Channel

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Quantity Unit Price Ext. Price
40+ $1.6087 $64.3480
90+ $1.3201 $118.8090
140+ $1.2787 $179.0180
190+ $1.2375 $235.1250
245+ $1.1963 $293.0935
325+ $1.0725 $348.5625
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MOQ: 40 pcs
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