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Same model may have multiple batches, images only for reference.
FQB9N50CTM Real Image
Same model may have multiple batches, images only for reference.

FQB9N50CTM

Part No FQB9N50CTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 9A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1030pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 135W (Tc)
Maximum Rds On at Id,Vgs 800 mOhm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 016425-FQB9N50CTM
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FQB9N50CTM CAD Model

Description

The Fairchild/ON Semiconductor FQB9N50CTM is an N-channel MOSFET used in discrete semiconductor products.

  • Package: D2PAK (TO-263AB)
  • Mounting Type: Surface Mount
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 9A @ 25°C
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 800 mOhm @ 4.5A, 10V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7223 $50.5610
170+ $0.5926 $100.7420
265+ $0.5741 $152.1365
360+ $0.5556 $200.0160
470+ $0.5371 $252.4370
625+ $0.4815 $300.9375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 600 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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