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Same model may have multiple batches, images only for reference.
FQD12P10TF Real Image
Same model may have multiple batches, images only for reference.

FQD12P10TF

Part No FQD12P10TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 9.4A DPAK
Datasheet
FQD12P10TF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 800pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 290 mOhm @ 4.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 067394-FQD12P10TF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQD12P10TF CAD Model

Description

The Fairchild/ON Semiconductor FQD12P10TF is a P-Channel MOSFET transistor.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 9.4A (Tc)
  • Maximum Rds On: 290 mOhm @ 4.7A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge: 27nC @ 10V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Power Dissipation: 2.5W (Ta), 50W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Status: Obsolete (EOL)
  • Popularity: Medium

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135+ $0.4377 $59.0895
325+ $0.3592 $116.7400
500+ $0.3477 $173.8500
690+ $0.3361 $231.9090
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1,190+ $0.2922 $347.7180
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