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FQD16N25CTM

Part No FQD16N25CTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 16A D-PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 53.5nC @ 10V
Max Input Capacitance 1080pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 126237-FQD16N25CTM
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FQD16N25CTM CAD Model

Description

The Fairchild/ON Semiconductor FQD16N25CTM is a N-Channel MOSFET with the following specifications:

  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current (Tc): 16A
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Package: D-Pak (TO-252-3, DPak (2 Leads + Tab), SC-63)
  • Maximum Rds On: 270 mOhm @ 8A, 10V
  • Power Dissipation (Max): 160W (Tc)
  • Mounting: SMD (SMT)
  • Packaging: Reel - TR

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5141 $51.4100
210+ $0.4816 $101.1360
325+ $0.4653 $151.2225
465+ $0.4328 $201.2520
605+ $0.4165 $251.9825
750+ $0.4003 $300.2250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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