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Same model may have multiple batches, images only for reference.
FQD1P50TF Real Image
Same model may have multiple batches, images only for reference.

FQD1P50TF

Part No FQD1P50TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 500V 1.2A DPAK
Datasheet
FQD1P50TF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 1.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 38W (Tc)
Maximum Rds On at Id,Vgs 10.5 Ohm @ 600mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039709-FQD1P50TF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQD1P50TF CAD Model

Description

The Fairchild/ON Semiconductor 1039709-FQD1P50TF is a P-channel MOSFET that has a maximum drain-source breakdown voltage of 500V and a continuous drain current of 1.2A @ 25°C.

  • Maximum Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 1.2A @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Rds on @ Id,Vgs: 10.5 Ohm @ 600mA and 10V
  • Mounting Technology: Surface-mount technology
  • Case/Package: D-Pak case
  • Supply and Demand Status: Balanced
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5943 $59.4300
240+ $0.4876 $117.0240
370+ $0.4724 $174.7880
510+ $0.4571 $233.1210
655+ $0.4419 $289.4445
875+ $0.3962 $346.6750
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