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Same model may have multiple batches, images only for reference.
FQD2N90TF Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQD2N90TF

Part No FQD2N90TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 1.7A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 7.2 Ohm @ 850mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 105278-FQD2N90TF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQD2N90TF CAD Model

Description

The FQD2N90TF is an N-channel MOSFET.

  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current: 1.7A (Tc) @ 25°C
  • Maximum Rds On: 7.2 Ohm @ 850mA, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 15nC @ 10V
  • Package: D-Pak
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5379 $59.1690
265+ $0.4414 $116.9710
410+ $0.4276 $175.3160
560+ $0.4139 $231.7840
725+ $0.4000 $290.0000
970+ $0.3587 $347.9390
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