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FQD3N30TM

Part No FQD3N30TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 2.4A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 230pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 1.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039736-FQD3N30TM
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FQD3N30TM CAD Model

Description

The Fairchild/ON Semiconductor FQD3N30TM MOSFET is a high-performance electronic component that is designed for use in a variety of electronic applications.

  • Maximum Power Dissipation: 2.5W (Ta) and 30W (Tc)
  • Drain-Source Breakdown Voltage: 300V
  • Continuous Drain Current: 2.4A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 7nC @ 10V
  • Maximum Input Capacitance: 230pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Lifecycle Status: Obsolete
  • Supply and Demand Status: balanced
  • Package: D-Pak
  • Packaging: reel - TR packaging

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4000 $58.0000
355+ $0.3283 $116.5465
545+ $0.3180 $173.3100
755+ $0.3077 $232.3135
975+ $0.2975 $290.0625
1,300+ $0.2667 $346.7100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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