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Same model may have multiple batches, images only for reference.
FQD3N60CTM_WS Real Image
Same model may have multiple batches, images only for reference.

FQD3N60CTM_WS

Part No FQD3N60CTM_WS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2.4A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 565pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 3.4 Ohm @ 1.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 100036-FQD3N60CTM_WS
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQD3N60CTM_WS CAD Model

Description

The Fairchild/ON Semiconductor FQD3N60CTM_WS is an N-channel MOSFET.

  • Maximum Power Dissipation: 50W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 2.4A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 3.4 Ohm @ 1.2A, 10V
  • Package: D-Pak
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63

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Quantity Unit Price Ext. Price
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9+ $12.3077 $110.7693
13+ $11.9231 $155.0003
18+ $11.5385 $207.6930
23+ $11.1539 $256.5397
30+ $10.0000 $300.0000
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