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Same model may have multiple batches, images only for reference.
FQD4N25TM_WS Real Image
Same model may have multiple batches, images only for reference.

FQD4N25TM_WS

Part No FQD4N25TM_WS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 3A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 5.6nC @ 10V
Max Input Capacitance 200pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 37W (Tc)
Maximum Rds On at Id,Vgs 1.75 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 101418-FQD4N25TM_WS
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQD4N25TM_WS CAD Model

Description

The FQD4N25TM_WS is an N-channel MOSFET transistor manufactured by Fairchild/ON Semiconductor. Commonly used in switching applications such as power supplies and motor control circuits. Supply and demand status is balanced.

  • Channel Type: N-Channel MOSFET
  • Maximum Voltage Rating: 250V
  • Continuous Drain Current: 3A
  • On-Resistance: 1.75Ohm
  • Gate Threshold Voltage: 5V @ 250μA
  • Package: D-PAK
  • Operating Temperature: -55°C to 150°C

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Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
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