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FQD4N50TF

Part No FQD4N50TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 2.6A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 460pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 2.7 Ohm @ 1.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039748-FQD4N50TF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FQD4N50TF CAD Model

Description

The FQD4N50TF is an N-channel MOSFET designed by Fairchild/ON Semiconductor.

  • Mounting: SMD (SMT)
  • Power Dissipation: 2.5W (Ta) and 45W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 2.6A (Tc)
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 2.7 Ohm @ 1.3A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3927 $58.9050
360+ $0.3222 $115.9920
560+ $0.3119 $174.6640
770+ $0.3015 $232.1550
990+ $0.2922 $289.2780
1,325+ $0.2622 $347.4150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,990 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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