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Same model may have multiple batches, images only for reference.
SI4562DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4562DY-T1-GE3

Part No SI4562DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 8-SOIC
Datasheet
SI4562DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Maximum Rds On at Id,Vgs 25 mOhm @ 7.1A, 4.5V
Gate-Source Threshold Voltage 1.6V @ 250μA
Max Gate Charge 50nC @ 4.5V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 113741-SI4562DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4562DY-T1-GE3 CAD Model

Description

The Vishay SI4562DY-T1-GE3 is an N and P-Channel FET type electronic component designed for discrete semiconductor products.

  • Status: Obsolete
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: Not specified
  • Gate-Source Threshold Voltage: 1.6V @ 250μA
  • Maximum Gate Charge: 50nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 25 mOhm @ 7.1A, 4.5V
  • Mounting: SMD (SMT) technology
  • Packaging: 8-SO
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,280 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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