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Same model may have multiple batches, images only for reference.
FQD5N20TF Real Image
Same model may have multiple batches, images only for reference.

FQD5N20TF

Part No FQD5N20TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 3.8A DPAK
Datasheet
FQD5N20TF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 7.5nC @ 10V
Max Input Capacitance 270pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 37W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 1.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039753-FQD5N20TF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQD5N20TF CAD Model

Description

The FQD5N20TF is an N-channel MOSFET IC that is used in discrete semiconductor products.

  • Power Dissipation: 2.5W (Ta) and 37W (Tc)
  • Mounting: D-Pak package
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current @ 25°C: 3.8A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 7.5nC @ 10V
  • Maximum Input Capacitance: 270pF @ 25V
  • Maximum Rds On @ Id,Vgs: 1.2 Ohm @ 1.9A, 10V

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