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Same model may have multiple batches, images only for reference.
FQD5P10TF Real Image
Same model may have multiple batches, images only for reference.

FQD5P10TF

Part No FQD5P10TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 100V 3.6A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 100V 3.6A DPAK
Datasheet
FQD5P10TF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.2nC @ 10V
Max Input Capacitance 250pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 1.05 Ohm @ 1.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 067407-FQD5P10TF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 2k pcs
Family Name FQD5P10
Introduction Date August 01, 2000
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FQD5P10TF CAD Model

Description

The FQD5P10TF is an obsolete (EOL) MOSFET manufactured by Fairchild/ON Semiconductor.

  • Type: P-channel MOSFET
  • Status: Obsolete (EOL)
  • Power Dissipation: 2.5W (Ta), 25W (Tc)
  • Continuous Drain Current: 3.6A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Operating Temperature: -55°C to 150°C (TJ)

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