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FQD630TF

Part No FQD630TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 7A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 550pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta), 46W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039763-FQD630TF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQD630TF CAD Model

Description

The Fairchild/ON Semiconductor FQD630TF by Fairchild/ON Semiconductor is an N-channel MOSFET that has a drain-source breakdown voltage of 200V.

  • Manufacturer: Fairchild/ON Semiconductor
  • Channel Polarity: N-channel
  • Drain-Source Breakdown Voltage: 200V
  • Maximum Power Dissipation: 2.5W (Ta), 46W (Tc)
  • Continuous Drain Current @ 25°C: 7A (Tc)
  • Maximum Rds on @ Id,Vgs: 400 mOhm @ 3.5A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Balanced

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