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Same model may have multiple batches, images only for reference.
FQD9N25TM Real Image
Same model may have multiple batches, images only for reference.

FQD9N25TM

Part No FQD9N25TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 7.4A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 700pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 55W (Tc)
Maximum Rds On at Id,Vgs 420 mOhm @ 3.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 016446-FQD9N25TM
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FQD9N25TM CAD Model

Description

The Fairchild/ON Semiconductor 016446-FQD9N25TM MOSFET is a high-performance N-Channel transistor designed for use in a variety of applications.

  • Maximum Power Dissipation: 2.5W at Ta, 55W at Tc
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 7.4A at 25°C
  • Gate-Source Threshold Voltage: 5V at 250μA
  • Maximum Gate Charge: 20nC at 10V
  • Maximum Rds On: 420 mOhm at 3.7A and 10V
  • Package: D-Pak
  • Applications: Power supplies, motor control, and lighting

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0611 $53.0550
105+ $0.9940 $104.3700
160+ $0.9604 $153.6640
225+ $0.8933 $200.9925
295+ $0.8597 $253.6115
365+ $0.8261 $301.5265
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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