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FQH8N100C Real Image FQH8N100C Real Image
Same model may have multiple batches, images only for reference.
FQH8N100C Real Image FQH8N100C Real Image
FQH8N100C Real Image FQH8N100C Real Image
Same model may have multiple batches, images only for reference.

FQH8N100C

Part No FQH8N100C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 8A TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V (1kV)
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 3220pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 225W (Tc)
Maximum Rds On at Id,Vgs 1.45 Ohm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 067413-FQH8N100C
Popularity Medium
Supply and Demand Status Balance
Quantity per package 450
Ultra Librarian 3D Model Ultra Librarian FQH8N100C CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a N-Channel polarity electronic component.

  • Maximum Power Dissipation: 225W (Tc)
  • Drive Voltage: 10V (Max Rds On, Min Rds On)
  • Drain-Source Breakdown Voltage: 1000V (1kV)
  • Package: TO-247
  • Operating Temperature: -55°C to 150°C (TJ)
  • Continuous Drain Current: 8A (Tc) at 25°C
  • Gate-Source Threshold Voltage: 5V at 250μA
  • Maximum Gate Charge: 70nC at 10V
  • Maximum Input Capacitance: 3220pF at 25V
  • Packaging Quantity: 450 units

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.1510 $58.1140
34+ $3.4060 $115.8040
53+ $3.2995 $174.8735
73+ $3.1931 $233.0963
94+ $3.0866 $290.1404
126+ $2.7674 $348.6924
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Availability: 1,823 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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