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Same model may have multiple batches, images only for reference.
FQI13N06LTU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQI13N06LTU

Part No FQI13N06LTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 13.6A I2PAK
Datasheet
FQI13N06LTU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 13.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 6.4nC @ 5V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.75W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 110 mOhm @ 6.8A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1039789-FQI13N06LTU
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQI13N06LTU CAD Model

Description

The Fairchild/ON Semiconductor FQI13N06LTU is an N-channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current at 25°C of 13.6A (Tc).

  • Mounting Type: Through Hole
  • Package: I2PAK
  • Power Dissipation (Max): 3.75W (Ta) and 45W (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Max Gate Charge: 6.4nC @ 5V
  • Maximum Input Capacitance: 350pF @ 25V
  • Maximum Rds On (Id,Vgs): 110 mOhm @ 6.8A, 10V
  • Supply and Demand: Balanced

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