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Same model may have multiple batches, images only for reference.
FQI2N90TU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQI2N90TU

Part No FQI2N90TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 2.2A I2PAK / Trans MOSFET N-CH 900V 2.2A 3-Pin(3+Tab) I2PAK Rail
Datasheet
FQI2N90TU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 900V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 500pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 3.13W (Ta), 85W (Tc)
Rds On (Maximum) @ Id, Vgs 7.2 Ohm @ 1.1A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package I2PAK
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 774740-FQI2N90TU
Popularity Medium
Supply and Demand Status Limited
Family Name FQI2N90
Introduction Date May 16, 2000
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FQI2N90TU CAD Model

Description

The FQI2N90TU is a MOSFET transistor in the QFET series from Fairchild/ON Semiconductor.

  • Channel Type: N-channel
  • Drain-Source Voltage: 900V
  • Gate-Source Voltage: +/- 30V
  • Continuous Drain Current @ 25°C: 2.2A (Tc)
  • Maximum Power Dissipation: 3.13W (Ta), 85W (Tc)
  • Maximum Rds On: 7.2 Ohm @ 1.1A, 10V
  • Gate Charge: 15nC @ 10V
  • Input Capacitance: 500pF @ 25V
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Family: Discrete Semiconductor Products
  • Drive Voltage: 10V
  • Introduction Date: May 16, 2000
  • EOL Date: Obsolete/End of Life
  • Supply and Demand Status: Limited

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